Anna Fontcuberta i Morral, EPFL, Switzerland
Growth mechanisms of III-V and II-Vs : insights of the nanoscale

Jim Speck, University of California- Santa Barbara, USA
β-Ga2O3: Growth, Doping, and Device Design



Alexandre Arnoult, LAAS-CNRS, Toulouse, France
In-situ magnification inferred curvature measurement applied to dilute bismide growth

Matthew Barone, Cornell University, USA
An MBE Approach to Record-Breaking Millimeter-Wave Tunable Dielectrics

Eva Benckiser, Max Planck Inst., Stuttgart, Germany
Complex oxide interfaces: Mind the facet. 

Abderraouf Boucherif, Université de Sherbrooke, Canada
Nanoscale substrate engineering for cost-effective III-V solar cells

W. Alan Doolittle, Georgia Inst. of Technology, USA
Chemical and Kinetic Mechanisms to Overcome Perceived Limitations in III-Nitride Epitaxy

Matthew Hardy, Naval Research Laboratory, USA
Growth of ScAlN: A Multi-functional Nitride

Stephanie Law, University of Delaware, USA    Young Investigator MBE Award 
Molecular Beam Epitaxy Growth of van der Waals films and nanostructures

Joanna Millunchick, University of Michigan, USA
Kinetics, Morphology, and Microstructure of III-V-Bi alloys

Yuefeng Nie, Nanjing University, China
Extreme tunability and novel functionality in ferroelectric oxide membranes

Sergei V. Novikov, University of Nottingham, UK
High-Temperature MBE of Hexagonal Boron Nitride for Deep-Ultraviolet, Lateral Heterostructures and Single-Photon Emitters

Federico Panciera, C2N, Paris-Saclay, France
Real-time TEM observations of III-V nanowire growth

David Ritchie, University of Cambridge, UK
Semiconductor quantum light sources using InAs quantum dots

Nitin Samarth, Penn State University, USA
Molecular Beam Epitaxy of Hybrid Topological Semimetal Heterostructures

Peter Schüffelgen, FZ-Jülich, Germany
From Materials to Devices: Topological Insulators for Quantum Computation

Chen Shang, Univ. California -Santa Barbara. USA
Robust high temperature operation of quantum dot lasers grown on (001) Si

Gunter Springholz, Johannes Kepler Univ. Linz, Austria
Natural Heterostructure Formation and Magnetic Doping of Bi- and Sb-Chalcogenide based Topological Insulators

Shiro Tsukamoto, Univ. Electro-Communications, Japan
Droplet epitaxy from beginning to present, pursuing initial cluster size

Charles W. Tu, Univ. of California, San Diego,USA    Al Cho MBE Award 
Bandgap Engineering and Device Applications of Dilute Nitrides

Hideki Yamamoto, NTT Basic Research Lab., Japan
Electron-Beam-Evaporation-Based Multi-Source Oxide MBE as a Synthesis Method for High-Quality and Novel Magnetic Materials--Beyond 3d Transition Metal Compounds